| 摘要 |
In a solid-state imaging device, a light-shielding film 10a is formed of at least one of a high melting point metal film or a high melting point metal compound film. The surface of the light-shielding film 10a is constituted by an amorphous silicon film 13. Instead of the amorphous silicon film 13, the surface of the light-shielding film may be covered with any one of a high melting point metal film containing silicon, a high melting point metal silicide film and an oxide film. Thus, the adherence between the light-shielding film 10a and the resist can be increased and the resist can be prevented from being peeled from the light-shielding film, and thus a solid-state imaging device with a high yield even with small pixels and a method for producing the same can be provided.
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