SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to suppress crack or moisture in a dicing process by including a damascene structure using Cu as a wring material. A first interlayer insulating layer(551) is formed on a semiconductor substrate. A first barrier metal layer(551a) covering a side of a first conductive pattern is formed inside the first interlayer insulating layer. A second interlayer insulating layer(552) is formed on the first interlayer insulating layer. A via contact part connects the first conductive pattern(551A) and a second conductive pattern(552A) formed on the first conductive pattern. A second barrier metal layer(552a) covering the side and the bottom of the via contact part is formed inside the second interlayer insulating layer. The bottom of the second barrier metal layer is contacted with at least part of the upper part of the first barrier metal layer.