| 摘要 |
A semiconductor and a manufacturing method thereof are provided to prevent a leakage current generated in the metal wire by forming a vacuum cavity or an air layer instead of a protective layer of an electrode pad. A substrate(200) includes at least one electrode pad(210). A sacrificial layer is formed on the substrate contacting the electrode pad partially. A rearrangement conductive layer(230) is formed on a part of the electrode pad and the upper part of the sacrificial layer. The sacrificial layer is removed. The substrate and the rearrangement conductive layer are partially non-contacted. |
