发明名称 |
Transfer mask blank, transfer mask, and transfer method using the transfer mask |
摘要 |
It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane. |
申请公布号 |
US7582393(B2) |
申请公布日期 |
2009.09.01 |
申请号 |
US20050535165 |
申请日期 |
2005.06.02 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
SANO HISATAKE;HOGA MORIHISA;IIMURA YUKIO;ARITSUKA YUKI;KURIHARA MASAAKI;NOZUE HIROSHI;YOSHIDA AKIRA |
分类号 |
G03F1/00;G03F1/14;G03F1/16;G03F1/20;G03F1/22;G03F1/24;G03F1/68;G03F7/20;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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