发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a plurality of memory devices and a plurality of high voltage devices on a substrate are provided. The substrate has a memory region and a high voltage region. The method comprises steps of forming a first dielectric layer on the substrate and then performing a thermal process so as to enlarge the thickness of the first dielectric layer in the high voltage region. A buried diffusion region is formed in the substrate in the memory region and a charge trapping layer and a blocking dielectric layer are formed over the substrate in the memory region. A patterned conductive layer is formed over the substrate so as to form gates the memory region and the high voltage region respectively and then a source/drain region is formed adjacent to the gates in the high voltage region in the substrate.
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申请公布号 |
US7582526(B2) |
申请公布日期 |
2009.09.01 |
申请号 |
US20060445870 |
申请日期 |
2006.06.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
SHIH YEN-HAO;LAI ERH-KUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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