Semiconductor device with enhanced breakdown voltage

摘要

In a peripheral portion of an IGBT chip, an intermediate potential electrode (20) is provided between a field plate (14) and a field plate (15) on a field oxide film (13), to surround an IGBT cell. The intermediate potential electrode (20) is supplied with a prescribed intermediate potential between the potentials at an emitter electrode (10) and a channel stopper electrode (12) from intermediate potential applying means that is formed locally in a partial region on the chip peripheral portion.