发明名称 Precursor containing copper indium and gallium for selenide (sulfide) compound formation
摘要 The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.
申请公布号 US7582506(B2) 申请公布日期 2009.09.01
申请号 US20070621101 申请日期 2007.01.08
申请人 发明人
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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