METHOD FOR DETERMINING ENDPOINT OF ETCHING

摘要

A method for determining endpoint of etching is provided to determine authentically a change of light emitting intensity and to detect rapidly the end point of etching. The etching gas is supplied inside the vacuum container(102) by the gas supplying unit. The radiation of the specific wave of the plasma generated among the etching process within the vacuum chamber is split by a spectroscope. The signal factor of the specific wave obtained by spectroscopy is introduced to the operation unit(105). The luminous intensity of the light of the extracted specific wave is acquired as time series data. The regression line is computed based on time series data acquired. The distance of the time-axis direction between the regression line and time series data are computed.