摘要 |
<p>A thin film transistor array substrate and method of manufacturing the same are provided to prevent the loss of aperture ratio by forming the first and second semiconductor layers of island type. The first metal layer, the first insulating layer, and the first and the second semiconductor layer are successively formed on the substrate(10). The photoresist pattern is formed on the second semiconductor layer. The first pattern for TFT, and the first pattern and gate pad for capacitor are formed on the substrate. The first pattern for TFT is comprised of the first metal layer pattern(12b) for TFT, the first insulating layer pattern(14b) for TFT, and the semiconductor layer pattern(16b) for TFT and the second semiconductor layer pattern(18b).</p> |