发明名称 A THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A thin film transistor array substrate and method of manufacturing the same are provided to prevent the loss of aperture ratio by forming the first and second semiconductor layers of island type. The first metal layer, the first insulating layer, and the first and the second semiconductor layer are successively formed on the substrate(10). The photoresist pattern is formed on the second semiconductor layer. The first pattern for TFT, and the first pattern and gate pad for capacitor are formed on the substrate. The first pattern for TFT is comprised of the first metal layer pattern(12b) for TFT, the first insulating layer pattern(14b) for TFT, and the semiconductor layer pattern(16b) for TFT and the second semiconductor layer pattern(18b).</p>
申请公布号 KR20090092659(A) 申请公布日期 2009.09.01
申请号 KR20080018025 申请日期 2008.02.27
申请人 LG DISPLAY CO., LTD. 发明人 PARK, HYUNG SEOK
分类号 H01L29/786;H01L21/027 主分类号 H01L29/786
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