| 摘要 |
A non-volatile memory element includes a lower electrode, an upper electrode, a recording layer arranged between the lower electrode and the upper electrode and containing a phase change material, and a bit line directly arranged on the upper electrode. The bit line is formed to be offset to the recording layer. With this arrangement, a contact area between the recording layer and the upper electrode and a contact area between the upper electrode and the bit line can be reduced without providing an interlayer insulation film between the upper electrode and the bit line. Thus, heat radiation to the bit line can be suppressed while the upper electrode and the bit line are connected without using a through-hole.
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