发明名称 |
Method for producing a single crystal |
摘要 |
A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature at an interface between a crucible and a raw material melt are defined. The single crystal is pulled with controlling the pulling rate and/or the temperature gradient at a solid-liquid interface within the determined range. The method produces a single crystal in which a desired defect region and/or a desired defect-free region can be determined more precisely and a single crystal with desired quality can be more surely pulled.
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申请公布号 |
US7582159(B2) |
申请公布日期 |
2009.09.01 |
申请号 |
US20050553754 |
申请日期 |
2005.10.18 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
IIDA MAKOTO |
分类号 |
C30B15/10;C30B29/06;C30B15/00;C30B15/20 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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