发明名称 |
CMOS image sensor and method for manufacturing the same |
摘要 |
A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.
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申请公布号 |
US7582504(B2) |
申请公布日期 |
2009.09.01 |
申请号 |
US20050319596 |
申请日期 |
2005.12.29 |
申请人 |
DONGBU ELECTRONICS, CO., LTD. |
发明人 |
HAN CHANG HUN |
分类号 |
H01L21/00;H01L31/062;H01L31/113 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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