发明名称 ALD film forming method
摘要 A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.
申请公布号 US7582544(B2) 申请公布日期 2009.09.01
申请号 US20060608504 申请日期 2006.12.08
申请人 TOKYO ELECTRON LIMITED 发明人 GUNJI ISAO;KAWANO YUMIKO
分类号 H01L21/36 主分类号 H01L21/36
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