发明名称 MEMORY SYSTEM COMPRISING ECC BLOCK FOR REDUCING A LATENCY AND ERROR CORRECTION METHOD THEREOF
摘要 A memory system including an error correction block and an error correction method thereof are provided to enhance a speed of a read operation by performing error correction calculation at high speed when an error of a single-bit number is generated. A syndrome calculation block(110) calculates a syndrome of a read data. An error correction calculation block includes a single-bit error correction block(120) and a multi-bit error correction block(130). The single-bit error correction block calculates an error position by performing division calculation between elements of the syndrome. The multi-bit error correction block calculates an error position and an error pattern by performing a forward Chien search operation from the syndrome. An error correction circuit corrects an error of a read data with reference to the error position. A control part detects a single-bit error from the syndrome, and activates a single-bit error correction block.
申请公布号 KR20090092628(A) 申请公布日期 2009.09.01
申请号 KR20080017972 申请日期 2008.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JO, NAM PHIL;YOUN, DAE HAN
分类号 G11C29/42 主分类号 G11C29/42
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