发明名称 |
MEMORY SYSTEM COMPRISING ECC BLOCK FOR REDUCING A LATENCY AND ERROR CORRECTION METHOD THEREOF |
摘要 |
A memory system including an error correction block and an error correction method thereof are provided to enhance a speed of a read operation by performing error correction calculation at high speed when an error of a single-bit number is generated. A syndrome calculation block(110) calculates a syndrome of a read data. An error correction calculation block includes a single-bit error correction block(120) and a multi-bit error correction block(130). The single-bit error correction block calculates an error position by performing division calculation between elements of the syndrome. The multi-bit error correction block calculates an error position and an error pattern by performing a forward Chien search operation from the syndrome. An error correction circuit corrects an error of a read data with reference to the error position. A control part detects a single-bit error from the syndrome, and activates a single-bit error correction block.
|
申请公布号 |
KR20090092628(A) |
申请公布日期 |
2009.09.01 |
申请号 |
KR20080017972 |
申请日期 |
2008.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JO, NAM PHIL;YOUN, DAE HAN |
分类号 |
G11C29/42 |
主分类号 |
G11C29/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|