| 摘要 |
<p>A pattern formation method of semiconductor device is provided to omit the exposure and the development processes using the phase separation membrane instead of the photoresist film. A hard mask film(108) is formed on a semiconductor substrate(100). A phase separation membrane is formed on the top of the hard mask film. The thermal process is performed in order to separate the phase from the phase separation membrane to the different pattern. Some patterns in which the etching selectivity is identical are removed, and the other patterns are remained. The hard mask film is patterned by the remained pattern. The phase separation membrane uses the polymer capable of being separated.</p> |
