| 摘要 |
<p>A silicon wafer having the edge thickness which is controlled and a manufacturing method thereof are provided to form the thickness of the edge part of wafer different from the central part of wafer. A wafer has the different thickness specification. The thickness at the near edge region of wafer is about 2% greater than the thickness at the center region of wafer. The thickness at the radius region is between the edge region and the center region. The thickness is controlled by the suitable units for the wafer process.</p> |
