| 摘要 |
A light emitting device and a manufacturing method thereof are provided to reduce the process cost and the process time by separating the substrate from the semiconductor light emitting device through the lift off. A plurality of via holes(203) is formed in a substrate(201). A sacrificial layer(205) is formed on the sapphire substrate in which the via hole is built up. The low temperature buffer layer, the n-type nitride layer, the active layer and the p-type nitride layer are formed on the sacrificial layer. The bonding layer and the sub mount are successively formed on the nitride semiconductor layer. A semiconductor light emitting device(250) is formed on the substrate in which the via hole is built up. Etchant etches the sacrificial layer and one or more via hole through the side of the sacrificial layer. |
