| 摘要 |
<p>A manufacturing method of semiconductor device is provided to increase the adhering characteristic or the coherence between the metal layer and the hard mask layer by performing the O2 treatment processing on the surface of the metal layer. The first conductive layer(104) for the tunnel insulating layer(102) and the floating gate are formed on the top of the semiconductor substrate(100). The tunnel insulating layer is formed of the oxide layer. The first conductive layer is formed of the poly silicon layer. The dielectric layer(106), the second conductive layer(108) for the control gate, the first very rear layer(110) and the metal layer(112) are formed on the top of the first conductive layer. The first hard mask layer, the second hard mask layer and the reflection barrier layer are formed on the top of the second barrier layer(114b) in which the O2 treatment process is performed.</p> |
