| 摘要 |
A formation method of semiconductor device is provided to prevent that the active area formed in the cell region is bent by forming a hard mask layer on a semiconductor substrate in which an element isolating trench is created. The first hard mask layer, the second hard mask layer, and the first anti-reflective layer are formed on the top of semiconductor substrate(200). A hard mask layer(210) is formed on the top of the semiconductor board so that the inside of first trenches are filled up. The fourth hard mask layer(212) and the second anti-reflection layer(214) are formed on the top of the third hard mask layer. The second photoresist pattern(216) is formed on the top of the second anti-reflective layer. The hard mask layer is formed of the amorphous carbon layer or the nitride layer. The third hard mask layer is formed of the material in which the step coverage is low.
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