| 摘要 |
<p>A transistor is provided to reduce the leakage current and improve the product quality of DRAM by varying the threshold voltage. A transistor comprises the well bias voltage application portion applying the well bias voltage of the different level according to the on/off of transistor on the well region. If the transistor is turned on, the well bias voltage application portion applies the well bias voltage of the high level to the well region. If the transistor is turned off, the well bias voltage application portion applies the well bias voltage of the low level to the well region. The well bias voltage application portion comprises a plurality of resistances which distributes the voltage applied to the gate and applies to the well region.</p> |
