| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to suppress that a contact plug and a gate line are electrically contacted by preventing the upper part of semiconductor substrate and element isolation layer from being etched. An element isolation layer(101) is formed on an element isolation region of semiconductor substrate(100). The element isolation layer is formed of the oxide layer. A gate insulating layer(103) is formed of the oxide layer. A trench(102) for the recess gate is formed at the upper part of element isolation layer and the active area of semiconductor substrate. The gate insulating layer is formed on the overall structure including the trench. After depositing and patterning the conductive layer on the overall structure including the gate insulating layer, the gate line(104) is formed.
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