| 摘要 |
A manufacturing method of semiconductor device and the semiconductor device are provided to make the manufacturing process be common using a wire bonding chip and a bump electrode chip. The integrated circuit is formed in each of plural chip areas on the semiconductor substrate segmented by a plurality of chip areas by the fractional area. The first interconnection(7) which electrically connects with the integrated circuit is formed on the upper body of the integrated circuit, and is extended to the second circuit region from the first circuit region. A part of the first interconnection of the first circuit region is defined into the first pad(16). A part of the first interconnection of the second circuit region is defined into the second pad(15). The protective film is formed on the semiconductor substrate. An opening is formed on the protective film of the first pad or the second pad. |
