| 摘要 |
<p>A semiconductor device driving method is provided to improve the refresh and write time property by omitting the threshold voltage control layer. In the off action, the negative voltage is applied to a gate(22) of semiconductor device. In the semiconductor device in which N channel is formed, the positive voltage is applied to the gate in the normal rate. Electrons are gathered to a substrate(21) which is adjacent to the gate. The gate is formed with P type or N type. In the semiconductor device in which the P channel is formed, the negative voltage is applied to the gate.</p> |
