| 摘要 |
A manufacturing method of semiconductor device is provided to effectively remove N and C which are impurity in conversion to the silicon dioxide film by performing the liquid agent processing to the PSZ(polysilazane) film. A trench(4) is formed in a silicon substrate(1). A coating film is heated up and the polysilazane film is formed. The polysilazane film is chemical-processed, and the polysilazane film is transformed to the silicon oxide film. The silicon oxide film is heated up, and the silicon oxide film is compacted. The SiH2NH solution is coated on the surface of the silicon substrate to form the coating film. The polysilazane film is retted in the processing liquid containing the water.
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