| 摘要 |
A manufacturing method of semiconductor device is provided to improve the adhesive strength by increasing the contact area between the PIQ layer and the metal pad. An inter-layer insulating film(305) is formed at the upper part of semiconductor substrate(300). The inter-layer insulating film is etched and the trench is created. The metal pad is formed on the upper part of interlayer insulating film in which the trench is created. The step height is formed at the metal pad by the trench. A passivation layer(340) is formed on the whole upper unit including the metal pad(325) in which the step height is formed. The passivation layer on the metal pad is etched. The part of passivation layer remains on the surface of metal pad. The PIQ(Polyimide Isoindro Quirazorindione) layer(345) is formed at the step difference upper part and the side wall of the etched passivation layer. Curing and etching process are performed in the PIQ layer and the metal pad is opened.
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