| 摘要 |
A method of forming contact hole of semiconductor device is provided to prevent the bowing profile by forming a spacer pattern at a side wall. A dielectric layer(12) and a hard mask layer(13) are formed on a substrate(11). The hard mask layer etching slope is etched firstly to the depth for maintaining the vertical profile. A space pattern(18A) having the selection ratio different from the hard mask layer is formed at the side wall of the hard mask layer. The hard mask pattern having the vertical profile is formed by etching the rest of the hard mask layer. A contact hole for exposing the substrate is formed by etching the dielectric layer. The hard mask layer is formed with the carbon film.
|
