| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a semiconductor device, and a wiring substrate that can cope with a general terminal spacing such as a C4 bump pitch and the like, regarding the spacing of terminal electrodes of semiconductor chips, without using a high-density wiring substrate of a complicated structure. <P>SOLUTION: The semiconductor device manufacturing method comprises: a process to mount a semiconductor chip 20 on a support substrate 30 so that a surface where a terminal electrode 40 is arranged may be exposed, a process to form an insulating layer 61 so that the surface where the terminal electrode 40 of the semiconductor chip 20 is arranged may be covered, a process to form a through electrode 62 connected to the terminal electrode 40 that penetrates the insulating layer 61, a process to form a metal wiring 63 connected to the through electrode 62 on the insulating layer 61, and an external terminal electrode formation process to form an external terminal electrode 50 that connects the metal wiring 63 to the outside on the metal wiring. In this case, the spacing D2 between adjoining external terminal electrodes 50 is made greater than the spacing D1 between adjoining terminal electrodes 40. Furthermore, the semiconductor device and the wiring substrate produced by this manufacturing method are provided. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
