| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents collapse of a column structure, and to provide the semiconductor device. SOLUTION: In the method of manufacturing the semiconductor device, to a semiconductor substrate of an SOI structure, a semiconductor layer is divided into a plurality of column structures by forming a trench from a semiconductor layer reaching to an insulating layer and an element is formed in at least one of the column structures as a semiconductor device. The trench is formed between at least one column structure and at least one of other column structures adjacent to the column structure leaving a columnar coupling part connecting a part of each thereof mutually for separating a plurality of column structures. After formation of the trench, an oxide film is formed in a trench wall surface in a plurality of column structures by thermal oxidation, and a connection part to the column structure in the coupling part is replaced by oxide. COPYRIGHT: (C)2009,JPO&INPIT
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