COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING FILM

摘要

PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for forming a film, suitably used in a semiconductor element expected to be highly integrated and multilayered, having excellent mechanical strength, a low dielectric constant, low hygroscopicity, and high processing resistance, and to provide a method for forming a silicon-containing film using the composition and a silicon-containing film obtained by the method. SOLUTION: The composition for forming a silicon-containing film includes an organosilane compound represented by a general formula (1) and a pore forming agent. In the formula (1), R1-R4are each same or different from each other and represent hydrogen atoms, or 1-4C alkyl, vinyl, or phenyl groups, R5represents 1-4C alkyl, acetyl, or phenyl group, n represents integer of 1-3, and m represents integer of 1-2. COPYRIGHT: (C)2009,JPO&INPIT