METHODS AND APPARATUS FOR SPUTTERING DEPOSITION USING DIRECT CURRENT
摘要
An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.
申请公布号
WO2009065039(A3)
申请公布日期
2009.08.27
申请号
WO2008US83640
申请日期
2008.11.14
申请人
ADVANCED ENERGY INDUSTRIES, INC.;NAUMAN, KEN;WALDE, HENDRIK, V.;CHRISTIE, DAVID, J.;FRIES, BRUCE
发明人
NAUMAN, KEN;WALDE, HENDRIK, V.;CHRISTIE, DAVID, J.;FRIES, BRUCE