| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor device obtaining a good Schottky characteristic or a good ohmic characteristic even in a reactive plasma etching using an etching gas containing silicon. <P>SOLUTION: The method of manufacturing the nitride semiconductor device forming an electrode on a nitride semiconductor layer, includes the steps of: carrying out plasma etching on a front surface of the nitride semiconductor layer by using a reactive etching gas containing at least silicon; cleaning the etched region by an acid or an alkali process liquid, while putting the etched region to an inert gas plasma; and forming the electrode on a cleaned etched region front surface. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
