发明名称 INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING SAME
摘要 Fabricating an integrated circuit device includes providing a semiconductor substrate comprising a first surface and a sec-ond surface, forming a wiring layer on the first surface of the semiconductor substrate, providing a circuit chip, and arranging the circuit chip on the wiring layer of the semi-conductor substrate. The fabricating further includes forming an embedding layer on the wiring layer and on the circuit chip, the embedding layer encapsulating the circuit chip, thinning the semiconductor substrate at the second surface after forming the embedding layer, and forming a conductive via in the semiconductor substrate being electrically coupled to the wiring layer and exposed at the second surface of the semiconductor substrate. Moreover, an integrated circuit de-vice is described.
申请公布号 US2009212420(A1) 申请公布日期 2009.08.27
申请号 US20080035645 申请日期 2008.02.22
申请人 发明人 HEDLER HARRY;IRSIGLER ROLAND;WOLTER ANDREAS
分类号 H01L23/48;H01L21/56 主分类号 H01L23/48
代理机构 代理人
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