发明名称 Diode and resistive memory device structures
摘要 In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
申请公布号 US2009212283(A1) 申请公布日期 2009.08.27
申请号 US20080072588 申请日期 2008.02.27
申请人 发明人 RATHOR MANUJ;CHEN AN;AVANZINO STEVEN;PANGRLE SUZETTE K.
分类号 H01L27/06;H01L29/04;H01L29/24 主分类号 H01L27/06
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