| 摘要 |
<p>A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate.</p> |
