发明名称 SILICON MONOCRYSTAL
摘要 <p>A silicon monocrystal which has grown by the CZ method has a diameter of 451 to 480 mm and an entire length of 660 mm or above which is a sufficient length. Accordingly, it is possible to reduce the change ratio of the radius in the axial direction of the diameter increase portion and the diameter reduction portion.</p>
申请公布号 WO2009104534(A1) 申请公布日期 2009.08.27
申请号 WO2009JP52486 申请日期 2009.02.16
申请人 SUMCO CORPORATION;FUJIWARA, TOSHIYUKI;HOSOI, TAKEHIKO;NAKAMURA, TSUYOSHI;HANI, KOICHI 发明人 FUJIWARA, TOSHIYUKI;HOSOI, TAKEHIKO;NAKAMURA, TSUYOSHI;HANI, KOICHI
分类号 C30B29/06 主分类号 C30B29/06
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