METHOD, AND EXTENSIONS, TO COUPLE SUBSTRATE EFFECTS AND COMPACT MODEL CIRCUIT SIMULATION FOR EFFICIENT SIMULATION OF SEMICONDUCTOR DEVICES AND CIRCUIT

摘要

This invention comprises a new method to couple simulation of electronics circuits (using compact models) with simulation of physical effects which require a PDE (partial differential equation) based simulation, for semiconductor MOSFET based devices and circuits. In particular the method can be used to capture high injection substrate effects such as single event transients (SET), latch-up, ESD, or thermal effects. Bipolar substrate effects are handled correctly and completely with this algorithm. The method extends the applicability of technology CAD (TCAD) to multiple devices.