| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing nitride semiconductor substrates, by which the manufacturing cost can be reduced by repeatedly using a substrate for growth and to provide a method for manufacturing a nitride semiconductor device. <P>SOLUTION: A single crystal substrate composed of any of silicon carbide, gallium nitride and aluminum nitride is used as a substrate 10 for growth, and then a releasing layer 11 composed of aluminum nitride and a semiconductor layer 12 composed of gallium nitride are formed on the substrate 10 for growth or a group III-V nitride semiconductor layer is further formed on the semiconductor layer 12. After forming a semiconductor device on the surface, the substrate 10 for growth is separated and removed by dissolving and removing the releasing layer 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
