| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance MONOS type nonvolatile semiconductor memory device having a charge storage film of a large charge trap quantity, and to provide a manufacturing method thereof. SOLUTION: A nonvolatile semiconductor memory device includes a tunnel insulating film on a semiconductor substrate, a charge storage film on the tunnel insulating film, a blocking insulating film on the charge storage film, a control gate electrode on the blocking insulating film, and source/drain regions formed on the semiconductor substrate at both sides of the control gate electrode. The charge storage film is equipped with at least a silicon nitride film and an insulating film containing La and Si on the silicon nitride film. COPYRIGHT: (C)2009,JPO&INPIT
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