| 摘要 |
An infinitely stackable interconnect device and method having the capability for electrical, thermal, optical, and fluidic interconnections to various layers. Through-substrate vias in the interconnect device are filled to enable electrical and thermal connection or optionally hermetically sealed relative to other surfaces to enable fluidic or optical connection. Optionally, optical components may be placed within the via region in order to manipulate optical signals. Redistribution of electrical interconnection is accomplished on both top and bottom surfaces of the substrate of the interconnect chip. The method for fabricating the interconnect device includes the steps of: forming, insulating, and at least partially filling vias with conductive material; connecting vias to conductive traces on a top surface of the interconnect chip; connecting vias to conductive traces on a bottom surface of the interconnect chip; providing bump regions for electrical and mechanical interconnection to a subsequent interconnect device; and forming recessed regions to accommodate a subsequent die in a stack. The method simultaneously accomplishes interconnection and packaging of multiple semiconductor die to form a stack.
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