| 摘要 |
A method for forming tungsten layer with enhanced surface roughness is provided to suppress the exposure fail due to the diffuse reflection and to obtain the photoresist pattern of a fine line width. The interlayer dielectric(200) is formed on the semiconductor substrate(100). The first tungsten layer(310) is deposited on the interlayer dielectric layer in less than 395‹C. The first evaporation of the first tungsten layer is performed by the chemical vapor deposition(CVD) process. The surface dry etch is performed on the surface of the first tungsten layer. The second tungsten layer is deposited by the chemical vapor deposition on the first tungsten layer. The chemical vapor deposition process is performed on the first tungsten layer to the bulk growth process in which the nucleation process is omitted.
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