| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems regarding a technique for improving performances in microfabrication of a semiconductor element using actinic rays or radiation, in particular, electron beam, X-ray or EUV light, and to positive a positive resist composition which includes high sensitivity which is less likely to be affected by variation in exposure energy, that is, includes high EL, and exhibits proper temporal stability, and to provide a pattern forming method that uses the composition. <P>SOLUTION: The positive resist composition for use with electron beam, X-ray or EUV includes: a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; a compound, capable of generating an acid upon irradiation with actinic rays or radiation; a basic compound; and an organic solvent, wherein the entire solid content concentration in the composition is 1.0-4.5 mass% and a ratio of the compound, capable of generating an acid upon irradiation with actinic rays or radiation is 10-50 mass%, based on the entire solid content. The pattern forming method using the composition is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
