| 摘要 |
PROBLEM TO BE SOLVED: To prevent the ingress of a via hole in an air gap, contrive a further reduction in interconnect capacitance, contrive an improvement in the mechanical strength of a multilayer interconnection structure having void parts and the prevention of diffusion of an oxidizing material, and suppress a reduction in yield. SOLUTION: A semiconductor device has a first interlayer dielectric 101 and a plurality of first interconnects 105 formed in the first interlayer dielectric 101. Between the adjacent interconnects of a plurality of the first interconnects 105 in the first interlayer dielectric 101, void parts 112 are selectively formed, and there is formed a cap insulating film 111 that is formed on the void part 112 and between the interconnects. The widths of the lower end and the upper end at the void part 112 is the same as the interval between the void part 112 and the adjacent interconnect. The position of the lower end of the void part 112 is lower than the position of the lower end of the first interconnect 105 that is adjacent to the void part 112. COPYRIGHT: (C)2009,JPO&INPIT |
