| 发明名称 |
THIN-FILM TRANSISTOR CONTAINING NANOWIRE, AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor including a nano wire and its manufacturing method. <P>SOLUTION: The thin-film transistor and its manufacturing method are provided including a nano wire aligned in the horizontal direction to a substrate from the side opposite to source/drain electrodes 41, 42 as a transistor channel layer 38. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
| 申请公布号 |
JP2009194362(A) |
申请公布日期 |
2009.08.27 |
| 申请号 |
JP20080244822 |
申请日期 |
2008.09.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SHA SHONAN;SONG BYOUN-GWON;JANG JAE EUN |
| 分类号 |
H01L29/786;H01L21/336;H01L29/06 |
主分类号 |
H01L29/786 |
| 代理机构 |
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