SILICON-CONTAINING FILM AND FORMATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a silicon-containing film that can be suitably used in a semiconductor element, or the like that is desired to be highly integrated and multilayered, has improved mechanical strength, low relative permittivity and hygroscopicity, and high working resistance, and to provide a formation method of the silicon-containing film. SOLUTION: The formation method of a silicon-containing film includes: a process for forming a deposition film by a chemical vapor deposition method by an organic silane compound expressed by a general formula (1) and a hole-forming agent; and a process for curing the deposition film. In the formula, R1-R4are identical or different and indicate hydrogen atoms, alkyl groups having 1-4 carbons, vinyl groups, or phenyl groups, R5indicates an alkyl group having 1-4 carbons, an acetyl group, or a phenyl group, n indicates an integer of 1-3, and m is an integer of 1-2. COPYRIGHT: (C)2009,JPO&INPIT