| 摘要 |
A method for monitoring device characteristics of semiconductor integrated circuits. The device characteristics includes censored data and uncensored data. The method includes determining a plurality of minimum breakdown voltages numbered from 1 through N, respectively, for a plurality of lots (e.g., wafer fabrication lots) numbered from 1 through N. Each of the plurality of minimum breakdown voltages is respectively indicative of the plurality of samples through order statistics. One or more of the plurality of samples includes one or more uncensored data points and one or more censored data points. The method includes processing the minimum breakdown voltages, respectively, for the plurality of lots. Each of the minimum breakdown voltages is processed for the respective plurality of lots and is indicative of a population characteristic breakdown voltage numbered from 1 through N for the respective lot numbered from 1 through N. The method includes determining one or more anomalies based upon the processing of the minimum breakdown voltages. The one or more anomalies is associated with one or more processes associated with at least one of the lots.
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