| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate semiconductor device with a low on-voltage and small parasitic capacitance. SOLUTION: The trench gate semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type adjacent to the first semiconductor layer, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor layer, a plurality of insulation gates reaching the second semiconductor layer through the third semiconductor layer, a fourth semiconductor layer of the second conductivity type in contact with the insulation gates, a first main electrode electrically connected with the third and fourth semiconductor layers, and a second main electrode electrically connected with the first semiconductor layer. The third semiconductor layer is electrically connected with the first main electrode via capacitance. COPYRIGHT: (C)2009,JPO&INPIT
|
