发明名称 Method and device for controlling a memory access and correspondingly configured semiconductor memory
摘要 Method and device for controlling a memory access and correspondingly configured semiconductor memory A method and a device for controlling a memory access of a memory comprising memory cells are described. A completion of the memory access is determined by means of at least one dummy bit line. The at least one dummy bit line is connected to a plurality of memory cells of the memory cells of the memory such that a content of the at least one memory cell can be read out via the at least one dummy bit line. The at least one memory cell can be set to a predetermined potential. Each of said plurality of memory cells is connected to the at least one dummy bit line and to at least one dummy word line such that each of said plurality of memory cells can be set to the predetermined potential by means of the at least one dummy bit line and by means of the at least one dummy word line.
申请公布号 US2009213674(A1) 申请公布日期 2009.08.27
申请号 US20090393386 申请日期 2009.02.26
申请人 INFINEON TECHNOLOGIES AG 发明人 KOEPPE SIEGMAR;OSTERMAYR MARTIN
分类号 G11C7/00;G11C8/00;G11C8/08;H01S4/00 主分类号 G11C7/00
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