发明名称 |
STRUCTURE AND PROCESS FOR METALLIZATION IN HIGH ASPECT RATIO FEATURES |
摘要 |
A high aspect ratio metallization structure is provided in which a noble metal-containing material is present at least within a lower portion of a contact opening located in a dielectric material and is in direct contact with a metal semiconductor alloy located on an upper surface of a material stack of at least one semiconductor device. In one embodiment, the noble metal-containing material is plug located within the lower region of the contact opening and an upper region of the contact opening includes a conductive metal-containing material. The conductive metal-containing material is separated from plug of noble metal-containing material by a bottom walled portion of a U-shaped diffusion barrier. In another embodiment, the noble metal-containing material is present throughout the entire contact opening.
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申请公布号 |
US2009212433(A1) |
申请公布日期 |
2009.08.27 |
申请号 |
US20080034708 |
申请日期 |
2008.02.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;MCFEELY FENTON R. |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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