| 发明名称 |
SEMICONDUCTOR COMPONENT WITH SCHOTTKY ZONES IN A DRIFT ZONE |
| 摘要 |
A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for producing a semiconductor component.
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| 申请公布号 |
US2009212331(A1) |
申请公布日期 |
2009.08.27 |
| 申请号 |
US20080034810 |
申请日期 |
2008.02.21 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
WERNER WOLFGANG |
| 分类号 |
H01L29/812;H01L21/329;H01L29/78;H01L29/872 |
主分类号 |
H01L29/812 |
| 代理机构 |
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