METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR GERMANIUM ON SILICON OXIDE, AND METHOD AND SYSTEM FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT

摘要

The invention relates to method for making, by localised hetero-epitaxy, a layer of a semiconductor i.e. of germanium, by lateral growth on the surface of an insulating material covering a semiconductor substrate. The invention also relates to the creation of a production base, or wafer, of a homogeneous or heterogeneous integrated circuit on germanium, and to a system for making such bases. The method comprises: a spatially selective etching producing a composite surface layer including a first material (106, 206) in a first region and a second material (104, 204), wherein the regions are contiguous at least at an interface area (1070, 2070) with a level difference between said first region and said second region; a chemical etching (128, 225) of the first material until a portion (107, 207) of the substrate is exposed in the vicinity of said interface; and the growth (129, 130) of said semiconductor (109, 110) from the exposed so-called germination area (107).